| Property* | Value |
|---|---|
| General | |
| Chemical Formula | SiC |
| Mechanical | |
| Density | 3.1 - 3.2 gm/cc |
| Hardness | 2550-2800 Knoop |
| Modulus of Elasticity | 58 - 65 x 106 psi |
| Flexural Strength | 59 - 108 kpsi |
| Compressive Strength | 550 kpsi |
| Poisson's Ratio | 0.11 - 0.17 |
| Fracture Toughness | 3 - 3.4 MPa m½ |
| Electrical | |
| Volume Resistivity | 10-100 ohm-cm |
| Thermal | |
| Coefficient of Thermal Expansion | 3.9 - 4.5 x 10-6/°C |
| Thermal Conductivity | 71 - 130 W/mK |
| Maximum Working Temperature | 1650 °C |
| Shock Resistance | 350 °C Diff. |
| All properties are at room temperature unless otherwise noted. Engineering data are representative, and are not intended as absolute nor warrantable. Manufacturer’s Data shown is blended from multiple sources and therefore illustrates the marketplace. | |
Silicon Carbide is among the hardest of
ceramics, and retains hardness and strength at elevated
temperatures, which translates into among the best
wear resistance also. Additionally, SiC has a high
thermal conductivity, especially in the CVD (chemical vapor
deposition) grade, which aids in thermal shock resistance.
It is also half the weight of steel.
Based on this combination of hardness, resistance to wear, heat
and corrosion, SiC is often specified for seal faces and high performance
pump parts.
Reaction Bonded SiC has the lowest cost production technique with a course grain. It provides somewhat lower hardness and use temperature, but higher thermal conductivity.
Direct Sintered SiC is better grade than Reaction Bonded and is commonly specified for high temperature work.
CVD SiC ® is a face centered cubic, polycrystalline form produced by chemical vapor deposition. This material is extremely pure, and is specified for it's excellent thermal conductivity approaching 300 W/mK. It is considerably more expensive to produce than the sintered or reaction bonded grades. ® Rohm & Haas.
Wikipedia Reference for Silicon Carbide Sintered
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